'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates (1997)
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
QUIVY, A. A. et al. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates. Brazilian Journal of Physics, v. 27/A, n. 4, p. 125-129, 1997Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf. Acesso em: 11 maio 2024.APA
Quivy, A. A., Frizzarini, M., Silva, E. C. F. da, Sperândio, A. L., & Leite, J. R. (1997). 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates. Brazilian Journal of Physics, 27/A( 4), 125-129. Recuperado de https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdfNLM
Quivy AA, Frizzarini M, Silva ECF da, Sperândio AL, Leite JR. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 125-129.[citado 2024 maio 11 ] Available from: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdfVancouver
Quivy AA, Frizzarini M, Silva ECF da, Sperândio AL, Leite JR. 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates [Internet]. Brazilian Journal of Physics. 1997 ; 27/A( 4): 125-129.[citado 2024 maio 11 ] Available from: https://repositorio.usp.br/directbitstream/a8f9dfec-0636-4805-8ec4-758da2800819/a24v362a.pdf
